Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD
نویسندگان
چکیده
We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 μm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 μm thick cell with an area of 4 cm, without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low
منابع مشابه
Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study
We have previously reported on the successful deposition of heterojunction solar cells whose thin intrinsic crystalline absorber layer is grown using the standard radio frequency plasma enhanced chemical vapour deposition process at 165 ◦C on highly doped P-type (100) crystalline silicon substrates. The structure had an N-doped hydrogenated amorphous silicon emitter deposited on top of the intr...
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